# BU508 Silicon NPN Power Transistor

## Description

· TO-3PN package
· High voltage
· High speed switching
· Designed for horizontal deflection circuits in large screen colour TV receivers

## Pinout

Pin	Description
1	Base
2	Collector (connected to mounting base)
3	Emitter

## Absolute Maximum Ratings (Ta=25°C)

· VCBO (Collector-Base Voltage): 1500V
· VCEO (Collector-Emitter Voltage): 700V
· VEBO (Emitter-Base Voltage): 10V
· IC (Collector Current - DC): 8A
· ICM (Collector Current - Pulse): 15A
· PC (Collector Power Dissipation): 125W
· Tj (Junction Temperature): 150°C
· Tstg (Storage Temperature): -65°C to 150°C

## Thermal Characteristics

· Rth j-c (Thermal Resistance Junction-Case): 1.0 °C/W

## Electrical Characteristics (Tj=25°C unless otherwise specified)

· V(BR)EBO (Emitter-Base Breakdown Voltage): 10V
· VCEO(SUS) (Collector-Emitter Sustaining Voltage): 700V
· VCEsat (Collector-Emitter Saturation Voltage): 5.0V (IC=4.5A, IB=2A)
· VBEsat (Base-Emitter Saturation Voltage): 1.3V (IC=4.5A, IB=2A)
· ICES (Collector Cut-off Current): 1.0 - 2.0mA (VCE=1500V, VBE=0, TC=125°C)
· IEBO (Emitter Cut-off Current): 0.1mA (VEB=5V, IC=0)
· hFE (DC Current Gain): 8 (IC=1A, VCE=5V)
· fT (Transition Frequency): 7MHz (IC=0.1A, VCE=5V)
· ts (Storage Time): 7μs (IC=4.5A, VCC=140V, IB=1.8A, LC=0.9mH, LB=3μH)
· tf (Fall Time): 0.55μs

## Package Outline

· TO-3PN package, outline dimensions in Fig. 2 (tolerance ±0.10 mm)