# Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604

## Description

· TO-66 package
· Excellent safe operating area
· Low collector saturation voltage

## Applications

· High frequency power amplifier
· Audio power amplifier
· Drivers

## Pinning

PIN	DESCRIPTION
1	Base
2	Emitter
3	Collector

## Absolute Maximum Ratings

SYMBOL	PARAMETER	COL3	CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	2N5598	Open emitter	80	V
VCBO	Collector-base voltage	2N5600/5602		100	V
VCBO	Collector-base voltage	2N5604		120	V
VCEO	Collector-emitter voltage	2N5598	Open base	60	V
VCEO	Collector-emitter voltage	2N5600/5602		80	V
VCEO	Collector-emitter voltage	2N5604		100	V
VEBO	Emitter-base voltage		Open collector	5	V
IC	Collector current			2	A
PD	Total power dissipation		TC=25℃	20	W
Tj	Junction temperature			150	℃
Tstg	Storage temperature			-65~150	℃

## Thermal Characteristics

· Rth j-c: 4.37 ℃/W

## Characteristics (Tj=25℃ unless otherwise specified)

SYMBOL	PARAMETER	COL3	CONDITIONS	MIN	TYP.	MAX	UNIT
VCEO(SUS)	Collector-emitter<br>sustaining voltage	2N5598	IC=50mA ;IB=0			60	V
VCEO(SUS)	Collector-emitter<br>sustaining voltage	2N5600/5602			80	80	80	V
VCEO(SUS)	Collector-emitter<br>sustaining voltage	2N5604			100	100	100	V
VCEsat	Collector-emitter saturation voltage		IC=1A; IB=0.1A			1.0	V
VBE	Base-emitter on voltage		IC=1A ; VCE=5V			1.5	V
ICBO	Collector cut-off current		VCB=Rated VCBO; IE=0			0.1	mA
ICEO	Collector cut-off current		VCE= Rated VCEO,IB=0			1.0	mA
IEBO	Emitter cut-off current		VEB=5V; IC=0			0.1	mA
hFE	DC current gain	2N5598/5602	IC=1A ; VCE=5V	70		200
hFE	DC current gain	2N5600/5604			30	30	90	90
fT	Transition frequency	2N5598/5602	IC=0.5A ; VCE=10V	60			MHz
fT	Transition frequency	2N5600/5604			50	50	50	MHz

## Package Outline
· Fig. 2 outline dimensions