1. General Information:

️· Type: NPN Plastic-Encapsulated Transistor
️· Manufacturer: Elektronische Bauelemente
️· Date: 14-Mar-2011 (Revision A)

2. Absolute Maximum Ratings:

Parameter	Symbol	Rating	Unit
Collector-Base Voltage	VCBO	30	V
Collector-Emitter Voltage	VCEO	25	V
Emitter-Base Voltage	VEBO	4	V
Collector Current	IC	50	mA
Collector Power Dissipation	PC	300	mW
Junction/Storage Temperature	TJ/TSTG	125/-55~125	°C

3. Electrical Characteristics (TA = 25°C unless otherwise specified):

Parameter	Symbol	Min	Typ	Max	Unit	Test Condition
Collector-Base Breakdown Voltage	V(BR)CBO	30			V	IC=100μA, IE=0
Collector-Emitter Breakdown Voltage	V(BR)CEO	25			V	IC=10mA, IB=0
Emitter-Base Breakdown Voltage	V(BR)EBO	4			V	IE=100μA, IC=0
Collector Cut-Off Current	ICBO			0.1	μA	VCB=30V, IE=0
Emitter Cut-Off Current	IEBO			0.1	μA	VEB=3V, IC=0
DC Current Gain	hFE	40		240		VCE=12.5V, IC=12.5mA
Collector-Emitter Saturation Voltage	VCE(sat)			0.2	V	IC=15mA, IB=1.5mA
Base-Emitter Saturation Voltage	VBE(sat)			1.5	V	IC=15mA, IB=1.5mA
Transition Frequency	fT	300			MHz	VCE=12.5V, IC=12.5mA
Collector Output Capacitance	Cob	0.8		2	pF	VCB=10V, IE=0, f=30MHz
Collector-Base Time Constant	CC			25	ps	VCB=10V, IE=-1mA, f=30MHz
Power Gain	Gpe	28		36	dB	VCC=12.5V, IE=-12.5mA, f=45MHz

4. Package/Outline:

️· TO-92 (based on the "REF." dimension table, providing dimensions for this package type).

Key Parameters to Note:

️· hFE (DC Current Gain): Typically around 240, but can vary.
️· fT (Transition Frequency): 300 MHz.
️· Gpe (Power Gain): 28-36dB.
️· Maximum Collector Current: 50mA
️· Maximum Collector Dissipation: 300mW