# LSPAD50 Low Leakage Pico-Amp Diode

## General Description
️· Replaces Siliconix PAD50.
️· Low leakage Pico-Amp Diode packaged in hermetic TO-72.
️· Designed for applications requiring minimized reverse current.
️· Features a leakage current of -50 pA.

## Key Features

️· Direct Replacement: For Siliconix PAD50.
️· Reverse Breakdown Voltage: BVR ≥ -45V.
️· Ultralow Leakage: ≤ 50 pA.
️· Reverse Capacitance: Crss ≤ 2.0 pF.

## Absolute Maximum Ratings

️· Storage Temperature: -65°C to +150°C.
️· Operating Junction Temperature: -55°C to +135°C.
️· Continuous Power Dissipation: 300mW.
️· Forward Current: 50mA.

## Electrical Characteristics (at 25°C)

️· Reverse Breakdown Voltage (BVR): -45V (IR = -1µA).
️· Forward Voltage (VF): 0.8V – 1.5V (IF = 5mA).
️· Total Reverse Capacitance (Crss): 1.5pF – 2pF (VR = -5V, f = 1MHz).
️· Maximum Reverse Leakage Current (IR): ≤ 50 pA (VR = -20V).

## Benefits

️· Negligible Circuit Leakage Contribution.
️· Circuit "Transparent" (except for shunt of high-frequency spikes).
️· Simplicity of Operation.

## Applications

️· Op Amp Input Protection.
️· Multiplexer Overvoltage Protection.

## Packages
️· TO-72
️· Bare Die (Contact Micross for dimensions)

## Contact Information
️· Micross Components Ltd: +44 1603 788967, baredie@micross.com, www.micross.com/distribution.aspx