# LAPT 2SC2837

## Description
Silicon NPN Epitaxial Planar Transistor, complementary to 2SA1186. Intended for audio and general purpose applications.

## Absolute Maximum Ratings (Ta=25°C)
️· VCBO: 150 V
️· VCEO: 150 V
️· VEBO: 5 V
️· IC: 10 A
️· IB: 2 A
️· PC: 100 W (Tc=25°C)
️· Tj: 150 °C
️· Tstg: -55 to +150 °C

## Electrical Characteristics (Ta=25°C)
️· ICBO: 100 µA (VCB=150V)
️· IEBO: 100 µA (VEB=5V)
️· V(BR)CEO: 150 V (IC=25mA)
️· hFE: 50 min (VCE=4V, IC=3V) - Ranks available: O(50-100), P(70-140), Y(90-180)
️· VCE(sat): 2.0 V max (IC=5A, IB=0.5A)
️· fT: 70 MHz typ (VCE=12V, IE=-1A)
️· COB: 60 pF typ (VCB=80V, f=1MHz)

## Typical Switching Characteristics (Common Emitter)
️· ton: 0.2 µs typ
️· tstg: 1.4 µs typ
️· tf: 0.35 µs typ (VCC=60V, RL=12Ω, IC=5A, VB2=-5V, IB1=500mA, IB2=-500mA)

## Graphical Characteristics
Includes graphs for:
️· IC – VCE
️· hFE – IC
️· hFE – IC Temperature
️· θj-a – t (Thermal Resistance)
️· fT – IE
️· VCE(sat) – IB
️· IC – VBE Temperature

## External Dimensions
️· Package: MT-100 (TO3P)
️· Weight: Approx 6.0g
️· Dimensions: 15.6x9.6x19.9mm (typical)