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Part No.	MRF544
Manufacturer	ADPOW
Size	302 Kbytes
Pages	4 pages
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Datasheet Summary with AI

· Current-Gain - Bandwidth Product (fT): 1500 MHz

## Functional Characteristics
· Maximum Unilateral Gain: 13.5 dB @ 200 MHz
· Insertion Gain: 11.7 – 12.7 dB @ 200 MHz

## S-Parameters (Common Emitter, VCE = 25 V, IC = 50 mA)
· Provides S-parameter data across a frequency range of 100-1000 MHz.

## Physical Characteristics
· TO-39 Package
· Contact Information:
- 140 Commerce Drive, Montgomeryville, PA 18936-1013
- Phone: (215) 631-9840
- Website: WWW.ADVANCEDPOWER.COM

# MRF544 Discrete Low Power Transistor

## Description
Designed for high-frequency applications, color video display monitors, and applications requiring high breakdown characteristics.

## Features
· Silicon NPN, high frequency, high breakdown transistor
· Maximum Unilateral Gain = 13.5 dB @ 200 MHz
· High Collector-Base Breakdown Voltage (BVCBO) = 100 V (min)
· Current-Gain - Bandwidth Product (fT) = 1400 MHz

## Absolute Maximum Ratings
· Collector-Emitter Voltage (VCEO): 70 Vdc
· Collector-Base Voltage (VCBO): 100 Vdc
· Emitter-Base Voltage (VEBO): 3.0 Vdc
· Collector Current (IC): 400 mA

## Electrical Specifications (Typical)
· Output Capacitance (COB): 2.5 pF @ 1 MHz
· Input Capacitance (CIB): 6.1 pF @ 1 MHz
· Current-Gain - Bandwidth Product (fT): 1500 MHz

## Functional Characteristics
· Maximum Unilateral Gain: 13.5 dB @ 200 MHz
· Insertion Gain: 11.7 – 12.7 dB @ 200 MHz

## S-Parameters (Common Emitter, VCE = 25 V, IC = 50 mA)
· Provides S-parameter data across a frequency range of 100-1000 MHz.

## Physical Characteristics
· TO-39 Package
· Contact Information:
- 140 Commerce Drive, Montgomeryville, PA 18936-1013
- Phone: (215) 631-9840
- Website: WWW.ADVANCEDPOWER.COM