# SILICON EPITAXIAL PLANAR DIODES - LL914...LL4454

## OVERVIEW
· These diodes are for general purpose and switching applications.
· Manufactured by SEMTECH ELECTRONICS LTD.

## KEY PARAMETERS (by type - see table below for specific values)
· Peak Reverse Voltage (VRMV): Ranges from 30V to 100V.
· Max. Average Rectified Current (IO): Ranges from 75mA to 150mA.
· Max. Power Dissipation (Ptot): Ranges from 400mW to 500mW.
· Max. Junction Temperature (Tj): 200°C (all types).
· Max. Forward Voltage Drop (VFV): Ranges from 0.50V to 1.0V (at IF = 10mA).
· Max. Reverse Current (IR): Ranges from 0.01nA to 100nA (at VR).
· Max. Reverse Recovery Time (trr): Ranges from max. 2.0ns to max. 10ns.

## PARAMETER TABLE

Type	VRMV (V)	IO (mA)	Ptot (mW)	Tj (°C)	VFV (V) @ IF=10mA	IR (nA) @ VR	trr (ns) - Conditions
LL914	100	75	500	200	1.0	10	max.4.0 - IF = 10mA, VR = 6V, RL = 100Ω, IR = 1mA
LL4149	100	150	500	200	1.0	10	max.4.0 - IF = 10mA, VR = 6V, RL = 100Ω, IR = 1mA
LL4151	75	150	500	200	1.0	50	max.2.0 - IF = 10mA, VR = 6V, RL = 100Ω, IR = 1mA
LL4152	40	150	400	200	0.55	0.10	max.2.0 - IF = 10mA, VR = 6V, RL = 100Ω, IR = 1mA
LL4153	75	150	400	200	0.55	0.10	max.2.0 - IF = 10mA, VR = 6V, RL = 100Ω, IR = 1mA
LL4154	35	150	500	200	1.0	30	max.2.0 - IF = 10mA, VR = 6V, RL = 100Ω, IR = 1mA
LL4447	100	150	500	200	1.0	20	max.4.0 - IF = 10mA, VR = 6V, RL = 100Ω, IR = 1mA
LL4449	100	150	500	200	1.0	30	max.4.0 - IF = 10mA, VR = 6V, RL = 100Ω, IR = 1mA
LL4450	40	150	400	200	0.54	0.50	max.4.0 - IF = IR = 10mA, to IR = 1mA
LL4451	40	150	400	200	0.50	0.10	max.10 - IF = IR = 10mA, to IR = 1mA
LL4453	30	150	400	200	0.55	0.01	-	-
LL4454	75	150	400	200	1.0	10	max.4.0 - IF = IR = 10mA, to IR = 1mA

## DATE
· Dated: 12/02/2003