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IRFD310 Datasheet with Chat AI
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  • # Example questions: ➢ What type of applications are vishay products *not* designed for unless expressly indicated?
    ➢ What test circuit is used to determine the gate charge characteristics of the mosfet, as shown in figure 13b?
    ➢ What is the maximum continuous source-drain diode current (is) for this mosfet?

    • Part No.IRFD310
    ManufacturerVISHAY
    Size1Mb
    Pages8 pages
    DescriptionPower MOSFET
    Datasheet Summary with AI

    # IRFD310, SiHFD310 Power MOSFET

    ## Features
    · Dynamic dV/dt Rating
    · Repetitive Avalanche Rated
    · For Automatic Insertion
    · End Stackable
    · Fast Switching
    · Ease of Paralleling
    · Simple Drive Requirements
    · Lead (Pb)-free Available
    · RoHS Compliant Options

    ## Product Summary
    · VDS (Drain-Source Voltage): 400 V
    · RDS(on) (On-State Resistance): 3.6 Ω (VGS = 10 V)
    · Qg (Total Gate Charge): 17 nC
    · Configuration: Single N-Channel MOSFET
    · Package: HEXDIP

    ## Absolute Maximum Ratings (TC = 25°C)
    · Drain-Source Voltage (VDS): 400 V
    · Gate-Source Voltage (VGS): ±20 V
    · Continuous Drain Current (ID): 0.35 A (TC = 25°C), 0.22 A (TC = 100°C)
    · Pulsed Drain Current (IDM): 2.8 A
    · Power Dissipation (PD): 1.0 W

    ## Thermal Resistance
    · Maximum Junction-to-Ambient (RthJA): 62 °C/W

    ## Specifications (TJ = 25°C)
    · Drain-Source Breakdown Voltage (VDS): 400 V
    · Gate-Source Threshold Voltage (VGS(th)): 2.0 - 4.0 V
    · Drain-Source On-State Resistance (RDS(on)): 1.1 Ω (VGS = 10 V, ID = 0.38 A)
    · Forward Transconductance (gfs): 1.0 S

    ## Ordering Information
    · IRFD310PbF: Lead (Pb)-free
    · SiHFD310-E3: Lead (Pb)-free
    · IRFD310: SnPb
    · SiHFD310: SnPb

    # IRFD310, SiHFD310 Power MOSFET

    ## Features
    · Dynamic dV/dt Rating
    · Repetitive Avalanche Rated
    · For Automatic Insertion
    · End Stackable
    · Fast Switching
    · Ease of Paralleling
    · Simple Drive Requirements
    · Lead (Pb)-free Available
    · RoHS Compliant Options

    ## Product Summary
    · VDS (Drain-Source Voltage): 400 V
    · RDS(on) (On-State Resistance): 3.6 Ω (VGS = 10 V)
    · Qg (Total Gate Charge): 17 nC
    · Configuration: Single N-Channel MOSFET
    · Package: HEXDIP

    ## Absolute Maximum Ratings (TC = 25°C)
    · Drain-Source Voltage (VDS): 400 V
    · Gate-Source Voltage (VGS): ±20 V
    · Continuous Drain Current (ID): 0.35 A (TC = 25°C), 0.22 A (TC = 100°C)
    · Pulsed Drain Current (IDM): 2.8 A
    · Power Dissipation (PD): 1.0 W

    ## Thermal Resistance
    · Maximum Junction-to-Ambient (RthJA): 62 °C/W

    ## Specifications (TJ = 25°C)
    · Drain-Source Breakdown Voltage (VDS): 400 V
    · Gate-Source Threshold Voltage (VGS(th)): 2.0 - 4.0 V
    · Drain-Source On-State Resistance (RDS(on)): 1.1 Ω (VGS = 10 V, ID = 0.38 A)
    · Forward Transconductance (gfs): 1.0 S

    ## Ordering Information
    · IRFD310PbF: Lead (Pb)-free
    · SiHFD310-E3: Lead (Pb)-free
    · IRFD310: SnPb
    · SiHFD310: SnPb

    Part No.IRFD310
    ManufacturerVISHAY
    Size1Mb
    Pages8 pages
    DescriptionPower MOSFET
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