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# TLP180 Photocoupler
## Overview
The TLP180 is a small outline, surface-mount coupler consisting of a photo transistor optically coupled to a gallium arsenide infrared emitting diode. It's designed for AC input current operation and is suitable for programmable controllers and telecommunication applications.
## Key Features
️· Isolation Voltage: 3750 Vrms (min.)
️· Current Transfer Ratio: 50% (min.), Rank GB: 100% (min.)
️· Operating Temperature: -55 to 100°C
️· UL Recognized: UL1577, file No. E67349
️· BSI Approved: BS EN60065:2002, BS EN60950-1:2002
## Electrical Characteristics (Ta = 25°C)
️· Forward Voltage (VF): 1.0 - 1.3 V @ IF = ±10 mA
️· Collector-Emitter Voltage (VCEO): 80 V
️· Collector Dark Current (ICEO): 0.01 - 50 µA
️· Current Transfer Ratio (IC/IF): 50 - 600%
## Absolute Maximum Ratings (Ta = 25°C)
️· Forward Current (IF): ±50 mA
️· Collector Current (IC): 50 mA
️· Power Dissipation (PC): 150 mW
️· Storage Temperature (Tstg): -55 to 125°C
## Coupled Electrical Characteristics (Ta = 25°C)
️· Current Transfer Ratio (IC/IF): 50-600%
️· Collector-Emitter Saturation Voltage (VCE(sat)): Up to 0.4V
️· Off-State Collector Current (IC(off)): Up to 10 µA
## Package Information
️· Weight: 0.09 g
️· Dimensions: Not specified, but small outline, surface mount.
## Restrictions
️· GaAs (Gallium Arsenide) is used – handle with care.
️· Not intended for critical applications where failure could cause loss of life or injury.
️· Ensure compliance with RoHS and other applicable regulations.
# TLP180 Photocoupler
## Overview
The TLP180 is a small outline, surface-mount coupler consisting of a photo transistor optically coupled to a gallium arsenide infrared emitting diode. It's designed for AC input current operation and is suitable for programmable controllers and telecommunication applications.
## Key Features
️· Isolation Voltage: 3750 Vrms (min.)
️· Current Transfer Ratio: 50% (min.), Rank GB: 100% (min.)
️· Operating Temperature: -55 to 100°C
️· UL Recognized: UL1577, file No. E67349
️· BSI Approved: BS EN60065:2002, BS EN60950-1:2002
## Electrical Characteristics (Ta = 25°C)
️· Forward Voltage (VF): 1.0 - 1.3 V @ IF = ±10 mA
️· Collector-Emitter Voltage (VCEO): 80 V
️· Collector Dark Current (ICEO): 0.01 - 50 µA
️· Current Transfer Ratio (IC/IF): 50 - 600%
## Absolute Maximum Ratings (Ta = 25°C)
️· Forward Current (IF): ±50 mA
️· Collector Current (IC): 50 mA
️· Power Dissipation (PC): 150 mW
️· Storage Temperature (Tstg): -55 to 125°C
## Coupled Electrical Characteristics (Ta = 25°C)
️· Current Transfer Ratio (IC/IF): 50-600%
️· Collector-Emitter Saturation Voltage (VCE(sat)): Up to 0.4V
️· Off-State Collector Current (IC(off)): Up to 10 µA
## Package Information
️· Weight: 0.09 g
️· Dimensions: Not specified, but small outline, surface mount.
## Restrictions
️· GaAs (Gallium Arsenide) is used – handle with care.
️· Not intended for critical applications where failure could cause loss of life or injury.
️· Ensure compliance with RoHS and other applicable regulations.
| Part No. | TLP180 |
| Manufacturer | TOSHIBA |
| Size | 166 Kbytes |
| Pages | 8 pages |
| Description | Photocoupler GaAs Ired & Photo−Transistor |
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