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  • Part No.TLP180
    ManufacturerTOSHIBA
    Size166 Kbytes
    Pages8 pages
    DescriptionPhotocoupler GaAs Ired & Photo−Transistor
    Datasheet Summary with AI

    # TLP180 Photocoupler

    ## Overview
    The TLP180 is a small outline, surface-mount coupler consisting of a photo transistor optically coupled to a gallium arsenide infrared emitting diode. It's designed for AC input current operation and is suitable for programmable controllers and telecommunication applications.

    ## Key Features
    ️· Isolation Voltage: 3750 Vrms (min.)
    ️· Current Transfer Ratio: 50% (min.), Rank GB: 100% (min.)
    ️· Operating Temperature: -55 to 100°C
    ️· UL Recognized: UL1577, file No. E67349
    ️· BSI Approved: BS EN60065:2002, BS EN60950-1:2002

    ## Electrical Characteristics (Ta = 25°C)
    ️· Forward Voltage (VF): 1.0 - 1.3 V @ IF = ±10 mA
    ️· Collector-Emitter Voltage (VCEO): 80 V
    ️· Collector Dark Current (ICEO): 0.01 - 50 µA
    ️· Current Transfer Ratio (IC/IF): 50 - 600%

    ## Absolute Maximum Ratings (Ta = 25°C)
    ️· Forward Current (IF): ±50 mA

    ️· Collector Current (IC): 50 mA
    ️· Power Dissipation (PC): 150 mW
    ️· Storage Temperature (Tstg): -55 to 125°C

    ## Coupled Electrical Characteristics (Ta = 25°C)
    ️· Current Transfer Ratio (IC/IF): 50-600%
    ️· Collector-Emitter Saturation Voltage (VCE(sat)): Up to 0.4V
    ️· Off-State Collector Current (IC(off)): Up to 10 µA

    ## Package Information
    ️· Weight: 0.09 g
    ️· Dimensions: Not specified, but small outline, surface mount.

    ## Restrictions
    ️· GaAs (Gallium Arsenide) is used – handle with care.
    ️· Not intended for critical applications where failure could cause loss of life or injury.
    ️· Ensure compliance with RoHS and other applicable regulations.

    # TLP180 Photocoupler

    ## Overview
    The TLP180 is a small outline, surface-mount coupler consisting of a photo transistor optically coupled to a gallium arsenide infrared emitting diode. It's designed for AC input current operation and is suitable for programmable controllers and telecommunication applications.

    ## Key Features
    ️· Isolation Voltage: 3750 Vrms (min.)
    ️· Current Transfer Ratio: 50% (min.), Rank GB: 100% (min.)
    ️· Operating Temperature: -55 to 100°C
    ️· UL Recognized: UL1577, file No. E67349
    ️· BSI Approved: BS EN60065:2002, BS EN60950-1:2002

    ## Electrical Characteristics (Ta = 25°C)
    ️· Forward Voltage (VF): 1.0 - 1.3 V @ IF = ±10 mA
    ️· Collector-Emitter Voltage (VCEO): 80 V
    ️· Collector Dark Current (ICEO): 0.01 - 50 µA
    ️· Current Transfer Ratio (IC/IF): 50 - 600%

    ## Absolute Maximum Ratings (Ta = 25°C)
    ️· Forward Current (IF): ±50 mA
    ️· Collector Current (IC): 50 mA
    ️· Power Dissipation (PC): 150 mW
    ️· Storage Temperature (Tstg): -55 to 125°C

    ## Coupled Electrical Characteristics (Ta = 25°C)
    ️· Current Transfer Ratio (IC/IF): 50-600%
    ️· Collector-Emitter Saturation Voltage (VCE(sat)): Up to 0.4V
    ️· Off-State Collector Current (IC(off)): Up to 10 µA

    ## Package Information
    ️· Weight: 0.09 g
    ️· Dimensions: Not specified, but small outline, surface mount.

    ## Restrictions
    ️· GaAs (Gallium Arsenide) is used – handle with care.
    ️· Not intended for critical applications where failure could cause loss of life or injury.
    ️· Ensure compliance with RoHS and other applicable regulations.

    Part No.TLP180
    ManufacturerTOSHIBA
    Size166 Kbytes
    Pages8 pages
    DescriptionPhotocoupler GaAs Ired & Photo−Transistor
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