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Part No.	BD237
Manufacturer	STMICROELECTRONICS
Size	265 Kbytes
Pages	5 pages
Description	COMPLEMENTARY SILICON POWER TRANSISTORS

Datasheet Summary with AI

️· IEBO: 1 mA
️· VCEO(sus): 60V (BD235/BD236), 80V (BD237/BD238)
️· VCE(sat): 0.6 V (IC = 1A, IB = 0.1A)
️· VBE: 1.3 V (IC = 1A, VCE = 2V)
️· hFE: 40/25 (IC = 150mA, VCE = 2V),
️· fT: 3 MHz (IC = 250mA, VCE = 10V)
️· hFE1/hFE2: 1.6

## Package & Dimensions
️· Package: SOT-32 (TO-126)
️· Dimensions: Provided in table format (see datasheet for detailed values of A, B, b, c, D, etc.)

## Notes
️· For PNP types, voltage and current values are negative.
️· Pulsed testing: Pulse duration = 300 µs, duty cycle 1.5 %.
️· Not authorized for use in life support devices without express written approval.

# BD235, BD236, BD237, BD238 - Silicon Power Transistors

## Description
️· Silicon epitaxial-base NPN and PNP power transistors in SOT-32 plastic package.
️· Intended for medium power linear and switching applications.
️· Complementary pairs: BD235/BD236, BD237/BD238.

## Absolute Maximum Ratings
️· VCBO (NPN/PNP): 60/100 V
️· VCER (NPN/PNP): 60/100 V
️· VCEO (NPN/PNP): 60/80 V
️· VEBO: 5 V
️· IC: 2 A
️· ICM: 6 A (tp < 5 ms)
️· Ptot: 25 W (at Tc = 25°C)
️· Tstg: -65 to 150°C
️· Tj: 150°C

## Electrical Characteristics (Tcase = 25°C)
️· ICBO: 0.1 mA - 2 mA
️· IEBO: 1 mA
️· VCEO(sus): 60V (BD235/BD236), 80V (BD237/BD238)
️· VCE(sat): 0.6 V (IC = 1A, IB = 0.1A)
️· VBE: 1.3 V (IC = 1A, VCE = 2V)
️· hFE: 40/25 (IC = 150mA, VCE = 2V),
️· fT: 3 MHz (IC = 250mA, VCE = 10V)
️· hFE1/hFE2: 1.6

## Package & Dimensions
️· Package: SOT-32 (TO-126)
️· Dimensions: Provided in table format (see datasheet for detailed values of A, B, b, c, D, etc.)

## Notes
️· For PNP types, voltage and current values are negative.
️· Pulsed testing: Pulse duration = 300 µs, duty cycle 1.5 %.
️· Not authorized for use in life support devices without express written approval.