# CDD2395 NPN Silicon Epitaxial Power Transistor

## Description
️· Designed for relay drive and DC-DC converter applications.
️· TO-220 Package

## Absolute Maximum Ratings
️· VCBO (Collector-Base Voltage): 60 V
️· VCEO (Collector-Emitter Voltage): 50 V
️· VEBO (Emitter-Base Voltage): 5.0 V
️· IC (Collector Current): 3.0 A
️· ICP (Peak Current): 4.5 A (pulse, 100ms)
️· PC (Power Dissipation): 2.0 W (at Ta=25°C)
️· Junction Temperature (Tj): 150°C
️· Storage Temperature Range (Tstg): -55 to +150°C

## Electrical Characteristics
️· VCEO (Collector-Emitter Voltage): 50 V (IC=1mA, IB=0)
️· VCBO (Collector-Base Voltage): 60 V (IC=50uA, IE=0)
️· VEBO (Emitter-Base Voltage): 5.0 V (IE=50uA, IC=0)
️· hFE (DC Current Gain): 60-320 (IC=0.5A, VCE=3V)
️· fT (Transition Frequency): -100 MHz (VCE=5V, IC=0.5A, f=30MHz)
️· Cob (Collector Output Capacitance): -35 pF (VCB=10V, IE=0, f=1MHz)

## hFE Classification
️· D: 60-120
️· E: 100-200
️· F: 160-320

## Pin Configuration
️· 1: Base
️· 2: Collector
️· 3: Emitter
️· 4: Collector

## Package Information
️· TO-220 / FP: 200 pcs/polybag; 50 pcs/tube
️· Net Weight: 396 gm/200 pcs; 120 gm/50 pcs
️· Dimensions: 3" x 7.5" x 7.5" (polybag); 3.5" x 3.7" x 21.5" (tube)
️· Carton Sizes and Quantities vary.