# BD237-S NPN Power Transistor Summary

Description: NPN epitaxial silicon power transistor designed for medium power, linear switching applications.

Package: TO126 (SOT-32) Plastic Package

Key Features:
️· Intended for medium power linear switching.

Absolute Maximum Ratings:

Parameter	Value	Unit
Collector-Base Voltage (VCBO)	120	V
Collector-Emitter Voltage (VCEO)	95	V
Emitter-Base Voltage (VEBO)	6.0	V
Collector Current (IC)	2.0	A
Collector Peak Current (ICM)	8.0	A
Total Dissipation (PD)	1.30	W
Storage Temperature	-65 to +150	°C
Operating Junction Temperature (Tj)	150	°C

Electrical Characteristics (Typical @ 25°C):

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO	IC=10µA, IE=0	120			V
Collector-Emitter Voltage	VCEO	IC=1mA, IB=0	95			V
Collector Emitter Saturation Voltage	VCE(sat)	IC=2A, IB=200mA	0.15		0.4	V
Base Emitter Saturation Voltage	VBE(sat)	IC=2A, IB=200mA	0.9		1.2	V
Collector Cutoff Current	ICBO	VCB=100V, IE=0			1.0	µA
Emitter Cutoff Current	IEBO	VEB=4V, IC=0			1.0	µA
DC Current Gain	hFE	IC=1A, VCE=2V; IC=2A, VCE=2V; IC=3A, VCE=2V	90; 35; 18		260
Current Gain Bandwidth Product	fT	IC=250mA, VCE=10V	3			MHz

Physical Characteristics:

️· Detailed dimensional specifications available in the datasheet (refer to the dimensions table).

Notes:

️· Pulse measurements are conducted with a pulse width of 300µs and a duty cycle of 1.5%.
️· Refer to the complete datasheet for more details and application information.