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ZXTP2041FTA Datasheet with Chat AI
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  • Part No.ZXTP2041FTA
    ManufacturerZETEX
    Size88 Kbytes
    Pages4 pages
    DescriptionSOT23 40 volt PNP silicon planar medium power transistor
    Datasheet Summary with AI

    1. Product Overview

    ️· Product Name: ZXTP2041F
    ️· Type: PNP Transistor
    ️· Description: Designed for power MOSFET gate driving and low-loss power switching, combining high gain, high current operation, and low saturation voltage.
    ️· Complementary Type: Not explicitly stated, but listed as 'ZXTP2041F' (likely a typo, possibly referring to an NPN equivalent).

    2. Key Features & Benefits

    ️· Low Saturation Voltage: Reduces power dissipation.
    ️· High Current Capability: 1 to 2 Amp capability.
    ️· Package: SOT23 (Small Outline Transistor)
    ️· Pb-Free: Compliant with environmental regulations.

    3. Ordering Information

    Device Reel Size Tape Width Quantity per Reel
    ZXTP2041FTA 7" 8mm 3,000
    ZXTP2041FTC 13" 8mm 10,000

    4. Device Marking

    ️· P41

    5. Pinout

    ️· (Diagram is present in the original document - not provided in text.)

    6. Absolute Maximum Ratings

    ️· VCBO (Collector-Base Voltage): -40 V
    ️· VCEO (Collector-Emitter Voltage): -40 V
    ️· VEBO (Emitter-Base Voltage): -5.0 V
    ️· ICM (Peak Pulse Current): -2 A
    ️· IC (Continuous Collector Current): -1 A
    ️· IBM (Peak Base Current): -1 A
    ️· PD (Power Dissipation): 350 mW
    ️· Tj:Tstg (Operating/Storage Temperature): -55 to +150 °C

    7. Electrical Characteristics (at 25°C)

    *(Detailed table of parameters - not fully reproduced here due to length, but key highlights include)*

    ️· V(BR)CBO (Collector-Base Breakdown Voltage): -40 V
    ️· V(BR)CEO (Collector-Emitter Breakdown Voltage): -40 V
    ️· ICES (Collector-Emitter Cutoff Current): ≤ -100 nA
    ️· ICBO (Collector-Base Cutoff Current): ≤ -100 nA
    ️· IEBO (Emitter-Base Cutoff Current): ≤ -100 nA
    ️· hFE (DC Current Gain): 300-800 (varying with collector current)
    ️· VCE(sat) (Collector-Emitter Saturation Voltage): 0.2 - 0.5 V (varying with collector current and base current)
    ️· VBE(sat) (Base-Emitter Saturation Voltage): ≤ -1.1 V
    ️· VBE(on) (Base-Emitter Turn-On Voltage): ≤ -1.0 V
    ️· fT (Transition Frequency): 150 MHz
    ️· Cobo (Output Capacitance): ≤ 10 pF

    8. Physical Dimensions & Packaging Details

    ️· (Diagrams and dimensional tables present in original document – not reproduced here.)
    ️· Package dimensions specified in millimeters and inches.

    9. Contact Information & Support

    ️· Addresses and contact information for corporate headquarters, Europe, Americas, and Asia Pacific regions.
    ️· Statements regarding product information and potential changes.

    1. Product Overview

    ️· Product Name: ZXTP2041F
    ️· Type: PNP Transistor
    ️· Description: Designed for power MOSFET gate driving and low-loss power switching, combining high gain, high current operation, and low saturation voltage.
    ️· Complementary Type: Not explicitly stated, but listed as 'ZXTP2041F' (likely a typo, possibly referring to an NPN equivalent).

    2. Key Features & Benefits

    ️· Low Saturation Voltage: Reduces power dissipation.
    ️· High Current Capability: 1 to 2 Amp capability.
    ️· Package: SOT23 (Small Outline Transistor)
    ️· Pb-Free: Compliant with environmental regulations.

    3. Ordering Information

    Device Reel Size Tape Width Quantity per Reel
    ZXTP2041FTA 7" 8mm 3,000
    ZXTP2041FTC 13" 8mm 10,000

    4. Device Marking

    ️· P41

    5. Pinout

    ️· (Diagram is present in the original document - not provided in text.)

    6. Absolute Maximum Ratings

    ️· VCBO (Collector-Base Voltage): -40 V
    ️· VCEO (Collector-Emitter Voltage): -40 V
    ️· VEBO (Emitter-Base Voltage): -5.0 V
    ️· ICM (Peak Pulse Current): -2 A
    ️· IC (Continuous Collector Current): -1 A
    ️· IBM (Peak Base Current): -1 A
    ️· PD (Power Dissipation): 350 mW
    ️· Tj:Tstg (Operating/Storage Temperature): -55 to +150 °C

    7. Electrical Characteristics (at 25°C)

    *(Detailed table of parameters - not fully reproduced here due to length, but key highlights include)*

    ️· V(BR)CBO (Collector-Base Breakdown Voltage): -40 V
    ️· V(BR)CEO (Collector-Emitter Breakdown Voltage): -40 V
    ️· ICES (Collector-Emitter Cutoff Current): ≤ -100 nA
    ️· ICBO (Collector-Base Cutoff Current): ≤ -100 nA
    ️· IEBO (Emitter-Base Cutoff Current): ≤ -100 nA
    ️· hFE (DC Current Gain): 300-800 (varying with collector current)
    ️· VCE(sat) (Collector-Emitter Saturation Voltage): 0.2 - 0.5 V (varying with collector current and base current)
    ️· VBE(sat) (Base-Emitter Saturation Voltage): ≤ -1.1 V
    ️· VBE(on) (Base-Emitter Turn-On Voltage): ≤ -1.0 V
    ️· fT (Transition Frequency): 150 MHz
    ️· Cobo (Output Capacitance): ≤ 10 pF

    8. Physical Dimensions & Packaging Details

    ️· (Diagrams and dimensional tables present in original document – not reproduced here.)
    ️· Package dimensions specified in millimeters and inches.

    9. Contact Information & Support

    ️· Addresses and contact information for corporate headquarters, Europe, Americas, and Asia Pacific regions.
    ️· Statements regarding product information and potential changes.

    Part No.ZXTP2041FTA
    ManufacturerZETEX
    Size88 Kbytes
    Pages4 pages
    DescriptionSOT23 40 volt PNP silicon planar medium power transistor
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