# isc N-Channel MOSFET Transistor IXFA24N60X

## Features

· Static drain-source on-resistance: RDS(on) ≤ 175mΩ @ VGS=10V
· Fully characterized avalanche voltage and current
· 100% Avalanche Tested
· Minimum lot-to-lot variations
· Application: Switched-mode power supplies, DC-DC converters

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	600	V
VGS	Gate-Source Voltage	±30	V
ID	Drain Current - Continuous	24	A
IDM	Drain Current - Single Pulsed	48	A
PD	Total Dissipation @TC=25℃	400	W
Tj	Operating Junction Temperature	-55~150	℃
Tstg	Storage Temperature	-55~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth(j-c)	Junction-to-case thermal resistance	0.31	℃/W

## Electrical Characteristics (TC=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
BVDSS	Drain-Source Breakdown Voltage	VGS=0V; ID =250μA	600		V
VGS(th)	Gate Threshold Voltage	VDS=VGS; ID =2.5mA	2.5	4.5	V
RDS(on)	Drain-Source On-Resistance	VGS=10V; ID=12A		175	mΩ
IGSS	Gate-Source Leakage Current	VGS=±30V;VDS=0V		±100	nA
IDSS	Drain-Source Leakage Current	VDS=VDSS;VGS=0V		20	μA
IDSS	Drain-Source Leakage Current	VDS=VDSS;VGS=0V;TJ=125℃		750	μA
VSD	Diode Forward Voltage	IF=24A; VGS =0V		1.4	V

## Important Notices

· ISC website: [www.iscsemi.cn](http://www.iscsemi.cn)
· Products are intended for general electronic equipment.
· Not designed for specialized quality/reliability or hazardous/aerospace/medical applications. Contact ISC for these uses.
· ISC disclaims warranty or liability arising from product use.