1N5819W датащи(PDF) - Sangdest Microelectronic (Nanjing) Co., Ltd

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1N5819W датащи (PDF) - Sangdest Microelectronic (Nanjing) Co., Ltd

1N5819W Datasheet PDF - Sangdest Microelectronic (Nanjing) Co., Ltd


номер детали	1N5819W

скачать	1N5819W скачать

объем файла	135.01 Kbytes

Page	4 Pages

производитель	SMC [Sangdest Microelectronic (Nanjing) Co., Ltd]

домашняя страница	http://www.smc-diodes.com/

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подробное описание детали

Metal silicon junction, majority carrier conduction

1N5819W Datasheet (PDF)

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1N5819W Datasheet PDF - Sangdest Microelectronic (Nanjing) Co., Ltd


номер детали	1N5819W

скачать	1N5819W Click to download

объем файла	135.01 Kbytes

Page	4 Pages

производитель	SMC [Sangdest Microelectronic (Nanjing) Co., Ltd]

домашняя страница	http://www.smc-diodes.com/

Logo

подробное описание детали	Metal silicon junction, majority carrier conduction

1N5819W датащи (HTML) - Sangdest Microelectronic (Nanjing) Co., Ltd

1N5819W Datasheet HTML 1Page - Sangdest Microelectronic (Nanjing) Co., Ltd

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1N5819W Datasheet HTML 4Page - Sangdest Microelectronic (Nanjing) Co., Ltd

1N5819W Информация о продукте

Features:
• Metal silicon junction, majority carrier conduction
• Guarding for overvoltage protection
• Low power loss, high efficiency
• High current capability
• Low forward voltage drop
• High surge capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications

Аналогичный номер детали - 1N5819W

производитель	номер детали	датащи	подробное описание детали
List of Unclassifed Man...	1N5819W	125Kb / 1P	SURFACE MOUNT SCHOTTKY BARRIER DIODE
AiT Semiconductor Inc.	1N5819W	319Kb / 5P	SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS REV1.0
Shenzhen Luguang Electr...	1N5819W	221Kb / 1P	surface mount schottky barrier diode
DONGGUAN YOU FENG WEI E...	1N5819W	75Kb / 3P	SCHOTTKY BARRIER RECTIFIERS
Xian Semipower Electron...	1N5819W	123Kb / 3P	SCHOTTKY BARRIER RECTIFIERS

Аналогичное описание - 1N5819W

производитель	номер детали	датащи	подробное описание детали
Shenzhen Luguang Electr...	SS345FL	1Mb / 2P	Metal silicon junction, majority carrier conduction
Kersemi Electronic Co.,...	MBR10H60	1Mb / 3P	Metal silicon junction, majority carrier conduction
Taiwan Semiconductor Co...	MBR20200PT	103Kb / 2P	Metal silicon junction, majority carrier conduction
Gaomi Xinghe Electronic...	MBR1030	377Kb / 2P	Metal of silicon rectifier , majority carrier conduction
Guangdong Youtai Semico...	SS52	198Kb / 3P	Metal to silicon rectifier, majority carrier conduction.
Sangdest Microelectroni...	SS3L45	150Kb / 5P	Metal to sillicon rectifier, majority carrier conduction
Gaomi Xinghe Electronic...	B5817W	300Kb / 3P	Low stored change,majority carrier conduction.
Shanghai Leiditech Elec...	B5817W	790Kb / 3P	Low stored change,majority carrier conduction.
Shanghai Leiditech Elec...	RB160M-30	587Kb / 3P	Low stored change,majority carrier conduction.
SHIKUES Electronics	B5817WS	2Mb / 4P	Extremely low, Low stored change, Majority carrier conduction

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