General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. Features • 2.8A, 250V, RDS(on) = 2.0Ω @VGS = 10 V • Low gate charge ( typical 8.1 nC) • Low Crss ( typical 7.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
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