производитель | номер детали | датащи | подробное описание детали |
ZP Semiconductor |
PMV30UN
|
200Kb / 3P |
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS??technology.
|
NXP Semiconductors |
PH1955L
|
77Kb / 12P |
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
Rev. 01-15 August 2005 |
PHB191NQ06LT
|
91Kb / 13P |
Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology
Rev. 01-05 May 2004 |
PSMN005-75P
|
271Kb / 13P |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology.
Rev. 01-26 April 2002 |
BUK7520-55A
|
318Kb / 15P |
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.
Rev. 01-18 January 2001 |
SHIKUES Electronics |
SKCS120N03ZB
|
1Mb / 6P |
N-Channel Enhancement Mode Field Effect Transistor in a DFN 3*3A-8L Plastic Package.
|
Diodes Incorporated |
BS870
|
63Kb / 2P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS11302 Rev. G-2 |
BSS123W
|
67Kb / 3P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30368 Rev. 2 - 2 |
DT453N
|
73Kb / 4P |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS11608 Rev. C-4 |
NXP Semiconductors |
BSH121
|
297Kb / 13P |
N-channel enhancement mode field-effect transistor
Rev. 01-14 August 2000 |