General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
   
Features
• 2.6 A, 100 V RDS(ON) = 125 mΩ @ VGS = 10 V
                       RDS(ON) = 135 mΩ @ VGS = 6 V
• High performance trench technology for extremely
    low RDS(ON)
• Low gate charge (14nC typ)
• High power and current handling capability
• Fast switching speed
   
Applications
• DC/DC converter