поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

ST2341A датащи (PDF) - Stanson Technology

ST2341A Datasheet PDF - Stanson Technology
номер детали ST2341A
скачать  ST2341A скачать

объем файла   582.36 Kbytes
Page   6 Pages
производитель  STANSON [Stanson Technology]
домашняя страница  http://www.stansontech.com
Logo STANSON - Stanson Technology
подробное описание детали ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

ST2341A Datasheet (PDF)

Go To PDF Page скачать датащи
ST2341A Datasheet PDF - Stanson Technology

номер детали ST2341A
скачать  ST2341A Click to download

объем файла   582.36 Kbytes
Page   6 Pages
производитель  STANSON [Stanson Technology]
домашняя страница  http://www.stansontech.com
Logo STANSON - Stanson Technology
подробное описание детали ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

ST2341A датащи (HTML) - Stanson Technology

ST2341A Datasheet HTML 1Page - Stanson Technology ST2341A Datasheet HTML 2Page - Stanson Technology ST2341A Datasheet HTML 3Page - Stanson Technology ST2341A Datasheet HTML 4Page - Stanson Technology ST2341A Datasheet HTML 5Page - Stanson Technology ST2341A Datasheet HTML 6Page - Stanson Technology

ST2341A Информация о продукте

DESCRIPTION
ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.

FEATURE
● -30V/-6.0A, RDS(ON) = 20m-ohm (Typ.) @VGS = -10V
● -30V/-3.8A, RDS(ON) = 28m-ohm @VGS = -4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
● SOT-23-3L package design




Аналогичный номер детали - ST2341A

производительномер деталидатащиподробное описание детали
logo
VBsemi Electronics Co.,...
ST2341A VBSEMI-ST2341A Datasheet
490Kb / 9P
   P-Channel 30 V (D-S) MOSFET
More results


Аналогичное описание - ST2341A

производительномер деталидатащиподробное описание детали
logo
Stanson Technology
ST3407SRG STANSON-ST3407SRG Datasheet
184Kb / 6P
   ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP9527 STANSON-STP9527 Datasheet
927Kb / 7P
   STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2315SRG STANSON-ST2315SRG Datasheet
218Kb / 6P
   ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP7401 STANSON-STP7401 Datasheet
461Kb / 6P
   STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST3401SRG STANSON-ST3401SRG Datasheet
212Kb / 6P
   ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
STP9437 STANSON-STP9437 Datasheet
375Kb / 6P
   STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP4435A STANSON-STP4435A Datasheet
311Kb / 6P
   STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP6621 STANSON-STP6621 Datasheet
452Kb / 6P
   STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
logo
Shenzhen Huazhimei Semi...
HM1P10MR HMSEMI-HM1P10MR Datasheet
763Kb / 5P
   P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
logo
Stanson Technology
STP4803 STANSON-STP4803 Datasheet
697Kb / 7P
   STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
More results



ссылки URL



Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com