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K4D263238E датащи (PDF) - Samsung semiconductor

K4D263238E Datasheet PDF - Samsung semiconductor
номер детали K4D263238E
скачать  K4D263238E скачать

объем файла   310.98 Kbytes
Page   17 Pages
производитель  SAMSUNG [Samsung semiconductor]
домашняя страница  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
подробное описание детали 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

K4D263238E Datasheet (PDF)

Go To PDF Page скачать датащи
K4D263238E Datasheet PDF - Samsung semiconductor

номер детали K4D263238E
скачать  K4D263238E Click to download

объем файла   310.98 Kbytes
Page   17 Pages
производитель  SAMSUNG [Samsung semiconductor]
домашняя страница  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
подробное описание детали 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

K4D263238E датащи (HTML) - Samsung semiconductor

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K4D263238E Информация о продукте

GENERAL DESCRIPTION
FOR 1M x 32Bit x 4 Bank DDR SDRAM
The K4D263238E is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 3.2GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.

FEATURES
• VDD/VDDQ = 2.8V ± 5% for -GC25
• VDD/VDDQ = 2.5V ± 5% for -GC2A/33/36/40/45
• SSTL_2 compatible inputs/outputs
• 4 banks operation
• MRS cycle with address key programs
   -. Read latency 3, 4, 5 (clock)
   -. Burst length (2, 4, 8 and Full page)
   -. Burst type (sequential & interleave)
• Full page burst length for sequential burst type only
• Start address of the full page burst should be even
• All inputs except data & DM are sampled at the positive
   going edge of the system clock
• Differential clock input
• No Wrtie-Interrupted by Read Function
• 4 DQS’s ( 1DQS / Byte )
• Data I/O transactions on both edges of Data strobe
• DLL aligns DQ and DQS transitions with Clock transition
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
• DM for write masking only
• Auto & Self refresh
• 32ms refresh period (4K cycle)
• 144-Ball FBGA
• Maximum clock frequency up to 400MHz
• Maximum data rate up to 800Mbps/pin




Аналогичный номер детали - K4D263238E

производительномер деталидатащиподробное описание детали
logo
Samsung semiconductor
K4D263238A SAMSUNG-K4D263238A Datasheet
298Kb / 17P
   1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238A-GC33 SAMSUNG-K4D263238A-GC33 Datasheet
298Kb / 17P
   1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238A-GC36 SAMSUNG-K4D263238A-GC36 Datasheet
298Kb / 17P
   1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238A-GC40 SAMSUNG-K4D263238A-GC40 Datasheet
298Kb / 17P
   1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238A-GC45 SAMSUNG-K4D263238A-GC45 Datasheet
298Kb / 17P
   1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
More results


Аналогичное описание - K4D263238E

производительномер деталидатащиподробное описание детали
logo
Samsung semiconductor
K4D263238F SAMSUNG-K4D263238F Datasheet
237Kb / 17P
   1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238A SAMSUNG-K4D263238A Datasheet
298Kb / 17P
   1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238D SAMSUNG-K4D263238D Datasheet
239Kb / 18P
   1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D26323RA SAMSUNG-K4D26323RA Datasheet
303Kb / 18P
   1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
K4D263238M SAMSUNG-K4D263238M Datasheet
281Kb / 19P
   1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
logo
NanoAmp Solutions, Inc.
NT5DS4M32EG NANOAMP-NT5DS4M32EG Datasheet
1Mb / 46P
   1M 횞 32 Bits 횞 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
logo
Samsung semiconductor
K4D64163HF SAMSUNG-K4D64163HF Datasheet
162Kb / 16P
   1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
logo
Hynix Semiconductor
HY57V283220T HYNIX-HY57V283220T Datasheet
913Kb / 15P
   4 Banks x 1M x 32Bit Synchronous DRAM
HY5V22GF HYNIX-HY5V22GF Datasheet
358Kb / 11P
   4 Banks x 1M x 32Bit Synchronous DRAM
logo
Samsung semiconductor
K4D261638E SAMSUNG-K4D261638E Datasheet
215Kb / 16P
   2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
More results



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