2SC3329 датащи(PDF) - Toshiba Semiconductor

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2SC3329 датащи (PDF) - Toshiba Semiconductor

2SC3329 Datasheet PDF - Toshiba Semiconductor


номер детали	2SC3329

скачать	2SC3329 скачать

объем файла	208.36 Kbytes

Page	4 Pages

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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подробное описание детали

NPN EPITAXIAL TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HIAD AMPLIFIERS)

2SC3329 Datasheet (PDF)

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2SC3329 Datasheet PDF - Toshiba Semiconductor


номер детали	2SC3329

скачать	2SC3329 Click to download

объем файла	208.36 Kbytes

Page	4 Pages

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

Logo

подробное описание детали	NPN EPITAXIAL TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HIAD AMPLIFIERS)

2SC3329 датащи (HTML) - Toshiba Semiconductor

2SC3329 Datasheet HTML 1Page - Toshiba Semiconductor

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2SC3329 Datasheet HTML 3Page - Toshiba Semiconductor

2SC3329 Datasheet HTML 4Page - Toshiba Semiconductor

2SC3329 Информация о продукте

For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers

• Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)

• Low pulse noise. Low 1/f noise

• Low base spreading resistance: rbb’ = 2.0 Ω (typ.)

• Complementary to 2SA1316

Аналогичный номер детали - 2SC3329

производитель	номер детали	датащи	подробное описание детали
Fuji Electric	2SC3320	109Kb / 3P	TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING
List of Unclassifed Man...	2SC3320	78Kb / 1P	SUPER HIGH SPEED SWITCHING TRANSISTORS
List of Unclassifed Man...	2SC3320	81Kb / 2P	High speed switching transistor
Unisonic Technologies	2SC3320	100Kb / 5P	HIGH VOLTAGE HIGH SPEED SWITCHING
Savantic, Inc.	2SC3320	210Kb / 4P	Silicon NPN Power Transistors

Аналогичное описание - 2SC3329

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SA1316	225Kb / 4P	TRANSISTOR (FOR LOW NOISE AUDIO AMPLIFIER, RECOMMENDED FOR THE FIRST STAGES OF MC GEAD AMPLIFIERS)
	2SC3381	211Kb / 3P	NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE, CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE, MAIN AMPLIFIERS)
	2SA1349	223Kb / 3P	TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS. RECOMMENDED FOR CASCADE, CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE, MAIN AMPL
	2SC732TM	211Kb / 3P	NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
	2SC3324	218Kb / 3P	NPN EPITAXIAL TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)
E-Tech Electronics LTD	GBC338	189Kb / 3P	The GBC338 is designed for drive and output-stages of audio amplifiers
	GBC558	186Kb / 2P	The GBC558 is designed for drive and output-stages of audio amplifiers
	GBC546	167Kb / 2P	The GBC546 is designed for drive and output-stages of audio amplifiers
	GBC547	171Kb / 2P	The GBC547 is designed for drive and output-stages of audio amplifiers
	GBC557	186Kb / 2P	The GBC557 is designed for drive and output-stages of audio amplifiers

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