производитель | номер детали | датащи | подробное описание детали |
Toshiba Semiconductor |
2SC5713
|
139Kb / 5P |
Silicon NPN Epitaxial Type High-Speed Switching Applications
|
2SC5906
|
165Kb / 5P |
Silicon NPN Epitaxial Type High-Speed Switching Applications
|
2SC5784
|
138Kb / 5P |
Silicon NPN Epitaxial Type High-Speed Switching Applications
|
2SC5703
|
137Kb / 5P |
Silicon NPN Epitaxial Type High-Speed Switching Applications
|
KEC(Korea Electronics) |
KDR322
|
66Kb / 2P |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Toshiba Semiconductor |
HN1D01F
|
231Kb / 4P |
Silicon Epitaxial Planar Type Ultra-High-Speed Switching Applications
|
Panasonic Semiconductor |
MA2SD30
|
78Kb / 3P |
Schottky Barrier Diodes Silicon epitaxial planar type For super high speed switching
|
Toshiba Semiconductor |
5FWJ2C42
|
133Kb / 2P |
SCHOTTKY BARRIER TYPE (HIGH SPEED RECTIFIER APPLICATIONS)
|
3GWJ42
|
168Kb / 3P |
SCHOTTKY BARRIER TYPE (HIGH SPEED RECTIFIER APPLICATIONS)
|
CRS01
|
156Kb / 4P |
SCHOTTKY BARRIER TYPE (HIGH SPEED RECTIFIER APPLICATIONS)
|